2018
2018.11. FAB-III Construction
2018.12 Development of GaN E-FET
2019.01 M-FAB Line-up
2017
2017.2. Technology Transfer(KANC, GaN FET)
2017.5. Specialized Company Certificate on
Materials & Components
2017.6. Contract for LiDAR Project (APD)
2017.8. Contract for Ga2O3 Power TR
2017.10. Investment(6 BillionWon)
2016
2016. 01 Development of Photo TR
2016. 05 Development of GaN SBD
2016.10 High-Technology Company Certificate
2016.12 Export Company Certificate
2015
2015. 06 FAB-II Construction
2014
2014. 04 Zener Sales Over 200M Unit/Month
2014. 06 Sales Increase in TVS
2014. 06 IP Star Company Certificate
2014. 07 Vertical Bidirectional TVS Sales
2014. 08 Investment(4.5Billion Won)
2014. 11 Flip-Chip TVS in Promotion
2014. 12 Fist Shipment to China
2013
2013. 04 Development of High-Performance FRD
2013. 05 Development of ULC-TVS
2013. 10 Start Sales of TVS and FRD
2013. 11 Zener Sales Over 100M Unit/Month
2012
2012. 02 Development of Low capacitance TVS
2012. 07 Development of LC-type ESD/EMI Filter
2011
2011. 10 INNO-BIZ Certificate
2010
2010. 07 Foundation of Research Institute
2010. 10 Development of RC-type ESD/EMI Filter
2009
2009. 01 Developed prototype SiGe HBT
2009. 03 Acquired ISO 9001:2008 certificate (ISO Korea Management Institute
2009. 03 Acquired RoHS compliance (SGS Testing Korea)
2009. 03 Service contracts for silicon and compound semiconductor FAB operation (ETRI)
2009. 03 Registered one patent (Zener diode technology)
2009. 03 Filed one patent (TVS diode technology)
2009. 08 Mass Production Contract for Si(ETRI-FAB)
2009. 11 Start Mass Production and Sales of Zener Diodes
2008
2008. 01 Founded Sigetronics, Inc.
2008. 02 Venture certification issued by kibo
2008. 03 First capital increase
2008. 04 Second capital increase
2008. 05 Technology transfer from ETRI (high frequency SiGe HBTs including three patents)
2008. 05 Received national project (global strategic project for technology innovation).
2008. 10 Registered two patents (SiGe HBT technologies
2008. 11 Agency contract with EDE Electronics, Ltd. (Israel)
2008. 11 Developed built-in resistor transistor (BRT) for mass production
2008. 12 Technology transfer from ETRI (Low Noise HEMT including one patent
