FAB Service

FAB SERVICE

EPI SERVICE

SYSTEM WAFER TECHNOLOGY
Single/Batch Chamber
Si wafer 6 inch and 8 inch 6” Undoped, N(or P)-type Si epi substrate
S8” Ge virtual substrate, Ge/GeSn epi substrate

Note :Custom specifications such as thickness and doping variations are available on demand.


PROCESS SERVICE (FEOL, BEOL)

ITEM WAFER TECHNOLOGY
Diffusion Silicon wafer, 6 inch Thermal oxidation, Diffusion, POCl3 doping(N-type), PBF doping(P-type)
Dry Etch Silicon wafer, 6 inch SiO2, Si3N4, Poly-Si, etc.
E-beam Silicon wafer, 6 inch Ti, Ni, Cr, Al, Ag, Au, Au80wt%Sn20wt%, Sn, etc.
Wafer Grind Silicon wafer, 6 inch Thickness control: 90um ~ 200um and above
Dicing SAW Silicon wafer, 6 inch Chip size: 150um x 150um, etc.

Note :Many machines are equipped at Sigetronics to serve various items more than those listed above.

OEM AND R&D COOPERATION

DEVICE TECHNOLOGY
Photo Diode(PD) IR-cut filter embedded PDs
Photo Transistor(PTR) IR-cut filter embedded PDs
PIN & SBD High voltage and RF/MW applications
GaN SBD Research collaboration is possible
GaN HEMT/FET Research collaboration is possible

Note :Every possible cooperation is always welcome. Many national R&D projects have been performed at Sigetronics.