FAB SERVICE
EPI SERVICE
| System | Wafer | Technology |
| SINGLE/BATCH CHAMBER | 6 inch Si Wafer | N(or P)-Type Si epi substrate |
| 6" Si/Ge/GeSn epi substrate |
Note : Custom specifications such as thickness and doping variations are available on demand.
PROCESS SERVICE (FEOL, BEOL)
| System | Wafer | Technology |
| Lithography | Silicon | Thermal oxidation, Diffusion, POCI3 doping(N-Type), PBF doping(P-Type) |
| Implant | Silicon | Thermal oxidation, Diffusion, POCI3 doping(N-Type), PBF doping(P-Type) |
| Diffusion | Silicon | Thermal oxidation, Diffusion, POCI3 doping(N-Type), PBF doping(P-Type) |
| Etch | Silicon | SiO2, Si3N4, Poly-Si, etc. |
| E-beam | Silicon 6 inch, 8 inch | Ti, Ni, Cr, Al, Ag, Au, Au80wt%Sn20wt%, Sn, etc. |
| Wafer Grind | Silicon 6 inch, 8 inch | Thickness control: 90um ~ 200um and above |
| Dicing SAW | Silicon 6 inch, 8 inch | Chip size: 150um x 150um, etc |
Note : Many machines are equipped at Sigetronics to serve various items more than those listed above.
OEM AND R&D COOPERATION
| System | Technology |
| Photo Diode(PD) | IR-cut filter |
| Nano Wire Photo Diode(NWPD) | IR-cut filter |
| Photo Transistor(PTR) | IR-cut filter |
| PIN & SBD | High voltage and RF/MW applications |
| GaN SBD/HEMT/FET | Research collaboration is possible |
| SiC SBD/MOSFET | Research collaboration is possible |
| Ga2O3 SBD/MOSFET | Research collaboration is possible |
Note : Many national R&D projects have been performed at Sigetronics.