FAB SERVICE
EPI SERVICE
| SYSTEM | WAFER | TECHNOLOGY |
| Single/Batch Chamber |
Si wafer 6 inch and 8 inch | 6” Undoped, N(or P)-type Si epi substrate |
| S8” Ge virtual substrate, Ge/GeSn epi substrate |
Note :Custom specifications such as thickness and doping variations are available on demand.
PROCESS SERVICE (FEOL, BEOL)
| ITEM | WAFER | TECHNOLOGY |
| Diffusion | Silicon wafer, 6 inch | Thermal oxidation, Diffusion, POCl3 doping(N-type), PBF doping(P-type) |
| Dry Etch | Silicon wafer, 6 inch | SiO2, Si3N4, Poly-Si, etc. |
| E-beam | Silicon wafer, 6 inch | Ti, Ni, Cr, Al, Ag, Au, Au80wt%Sn20wt%, Sn, etc. |
| Wafer Grind | Silicon wafer, 6 inch | Thickness control: 90um ~ 200um and above |
| Dicing SAW | Silicon wafer, 6 inch | Chip size: 150um x 150um, etc. |
Note :Many machines are equipped at Sigetronics to serve various items more than those listed above.
OEM AND R&D COOPERATION
| DEVICE | TECHNOLOGY |
| Photo Diode(PD) | IR-cut filter embedded PDs |
| Photo Transistor(PTR) | IR-cut filter embedded PDs |
| PIN & SBD | High voltage and RF/MW applications |
| GaN SBD | Research collaboration is possible |
| GaN HEMT/FET | Research collaboration is possible |
Note :Every possible cooperation is always welcome. Many national R&D projects have been performed at Sigetronics.