FAB SERVICE
EPI SERVICE
| System | Wafer | Technology |
| SINGLE/BATCH CHAMBER | Si wafer 6 inch and 8 inch | 6" Undoped, N(or P)-Type Si epi substrate |
| 8" Ge virtual substrate, Ge/GeSn epi substrate |
Note :Custom specifications such as thickness and doping variations are available on demand.
PROCESS SERVICE (FEOL, BEOL)
| System | Wafer | Technology |
| Diffusion | Silicon wafer, 6 inch | Thermal oxidation, Diffusion, POCI3 doping(N-Type), PBF doping(P-Type) |
| Dry Etch | Silicon wafer, 6 inch | SiO2, Si3N4, Poly-Si, etc. |
| E-beam | Silicon wafer, 6 inch | Ti, Ni, Cr, Al, Ag, Au, Au80wt%Sn20wt%, Sn, etc. |
| Wafer Grind | Silicon wafer, 6 inch | Thickness control: 90um ~ 200um and above |
| Dicing SAW | Silicon wafer, 6 inch | Chip size: 150um x 150um, etc |
Note :Many machines are equipped at Sigetronics to serve various items more than those listed above.
OEM AND R&D COOPERATION
| System | Wafer | Technology |
| Diffusion | Silicon wafer, 6 inch | Thermal oxidation, Diffusion, POCI3 doping(N-Type), PBF doping(P-Type) |
| Dry Etch | Silicon wafer, 6 inch | SiO2, Si3N4, Poly-Si, etc. |
| E-beam | Silicon wafer, 6 inch | Ti, Ni, Cr, Al, Ag, Au, Au80wt%Sn20wt%, Sn, etc. |
| Wafer Grind | Silicon wafer, 6 inch | Thickness control: 90um ~ 200um and above |
| Dicing SAW | Silicon wafer, 6 inch | Chip size: 150um x 150um, etc |
Note :Every possible cooperation is always welcome. Many national R&D projects have been performed at Sigetronics.