FAB SERVICE
EPI SERVICE
System | Wafer | Technology |
SINGLE/BATCH CHAMBER | 6 inch Si Wafer | N(or P)-Type Si epi substrate |
6" Si/Ge/GeSn epi substrate |
Note : Custom specifications such as thickness and doping variations are available on demand.
PROCESS SERVICE (FEOL, BEOL)
System | Wafer | Technology |
Lithography | Silicon | Thermal oxidation, Diffusion, POCI3 doping(N-Type), PBF doping(P-Type) |
Implant | Silicon | Thermal oxidation, Diffusion, POCI3 doping(N-Type), PBF doping(P-Type) |
Diffusion | Silicon | Thermal oxidation, Diffusion, POCI3 doping(N-Type), PBF doping(P-Type) |
Etch | Silicon | SiO2, Si3N4, Poly-Si, etc. |
E-beam | Silicon 6 inch, 8 inch | Ti, Ni, Cr, Al, Ag, Au, Au80wt%Sn20wt%, Sn, etc. |
Wafer Grind | Silicon 6 inch, 8 inch | Thickness control: 90um ~ 200um and above |
Dicing SAW | Silicon 6 inch, 8 inch | Chip size: 150um x 150um, etc |
Note : Many machines are equipped at Sigetronics to serve various items more than those listed above.
OEM AND R&D COOPERATION
System | Technology |
Photo Diode(PD) | IR-cut filter |
Nano Wire Photo Diode(NWPD) | IR-cut filter |
Photo Transistor(PTR) | IR-cut filter |
PIN & SBD | High voltage and RF/MW applications |
GaN SBD/HEMT/FET | Research collaboration is possible |
SiC SBD/MOSFET | Research collaboration is possible |
Ga2O3 SBD/MOSFET | Research collaboration is possible |
Note : Many national R&D projects have been performed at Sigetronics.