A next-generation power semiconductor developed by Sigetronics, a gallium oxide-based Schottky Barrier Diode (SBD), is gaining attention for ultra-high-speed switching applications.

Sigetronics, a leading Korean compound semiconductor company (Co-CEOs: Kyu-Hwan Shim and Deok-Ho Cho), announced on the 22nd that it has successfully developed a next-generation ultra-fast switching Schottky Barrier Diode (SBD) based on gallium oxide (Ga₂O₃), a material gaining attention as a key technology for future power semiconductors.

Gallium oxide is classified as a wide bandgap (WBG) material, offering a broader energy bandgap and higher breakdown electric field than silicon carbide (SiC) and gallium nitride (GaN). The bandgap refers to the energy difference between the valence band and conduction band of electrons in a material. The wider the bandgap, the more freely electrons can move, allowing the material to operate at higher voltages, temperatures, and frequencies.

Gallium oxide power semiconductors are recognized globally—particularly in the U.S. and Japan—as core devices for next-generation power conversion systems. They are capable of overcoming the limitations of previous semiconductors, such as low breakdown voltages and high leakage currents, and offer superior performance in high-voltage, high-current, high-temperature, and high-efficiency applications. These characteristics make them especially suitable for power converters, motor drivers, and inverters in electric vehicles (EVs).

However, compared to other WBG materials, Ga₂O₃ research and development (R&D) is still in a relatively early stage, and the technology has yet to be fully commercialized. As a result, semiconductor companies and institutions worldwide are racing to secure early leadership in this field. The number of related patents has surged by over 50% in recent years.

Through the Ministry of Trade, Industry and Energy’s Materials & Components Technology Development Program, Sigetronics successfully completed the “Development of High-Quality, Low-Defect Gallium Oxide Epi Wafers and Power Devices with Over 1kV Breakdown Voltage” project, becoming the first company in Korea to develop a 1,200V-class Ga₂O₃ power semiconductor. This technological milestone positions Sigetronics as a frontrunner in the emerging market for next-generation power semiconductors.

The newly developed device—an ultra-wide bandgap (UWB) semiconductor—minimizes leakage current and on-resistance, making it ideal not only for home appliances and IT device inverters and converters but also for applications in EV charging modules, the Korean defense industry (K-Defense), and the aerospace sector (K-Space). It is expected to contribute significantly to reducing power consumption and enabling device miniaturization and weight reduction.

Jong-Won Kim, Marketing Director at Sigetronics, stated, “What makes this achievement truly groundbreaking is the scalability of the Ga₂O₃ bulk wafers for high-power switching control. This allows for differentiated applications compared to SiC and GaN. We plan to engage with customers across various industries to commercialize and optimize our devices for specific use cases.”

This development further solidifies Sigetronics' position as a pioneer in advanced compound semiconductors and paves the way for its leadership in the global power semiconductor market.