The headquarters view of Sigetronics in Wanju, Jeollabuk-do.

Wanju, Jeollabuk-do – July 18 — Semiconductor device manufacturer Sigetronics Co., Ltd. (co-CEOs Kyu-Hwan Shim and Deok-Ho Cho) announced today that it is accelerating efforts to diversify its business by expanding its lineup beyond core devices into next-generation power semiconductors and sensors.

Building on its flagship semiconductor device technologies, the company has recently added Gallium Nitride (GaN) and Gallium Oxide (Ga₂O₃) as next-generation alternatives to traditional silicon-based semiconductors. In addition, Sigetronics is securing new manufacturing facilities to expand its fast-growing sensor product sales.

Sigetronics’ primary business remains Electrostatic Discharge (ESD) protection devices, which are crucial components for protecting internal circuitry from transient high-voltage events in electronic systems. The company has developed ESD devices with advanced epitaxial (Epi) structures, capable of interrupting voltages ranging from 8 to 30 kV within a few nanoseconds. These products have been qualified by leading automotive manufacturers for in-vehicle applications and are now in the process of being supplied to global LED customers.

Positioning for the future, GaN power semiconductors have been selected as a core growth area. These devices offer significantly greater power efficiency and voltage tolerance compared to silicon, operating reliably under high-temperature conditions. Sigetronics has released two 700V-class GaN power semiconductor samples and is currently in supply negotiations with prospective clients.

Furthermore, the company is preparing to mass-produce Ga₂O₃ semiconductors, considered the third-generation power semiconductor following SiC and GaN. Ga₂O₃ offers superior performance for high-voltage, high-current, and high-temperature applications by overcoming the low breakdown voltage and high leakage current challenges of existing materials. Sigetronics recently succeeded in developing the first domestically produced 1200V-class Ga₂O₃ power semiconductor, which is garnering attention for applications in power converters and electric vehicles.

The company is also focusing heavily on the sensor device market. To meet the explosive demand driven by bio-healthcare, robotics, artificial intelligence (AI), and automotive applications, Sigetronics has introduced optical heart rate sensors for wearable devices such as smartwatches and smart rings. The company has established a vertically integrated Multi-Project Fab (M-FAB) for epitaxial growth and device production to enhance manufacturing efficiency and quality.

Jong-Won Kim, Marketing Director at Sigetronics, stated, “We are experiencing robust growth due to the diversification and increasing demand for our semiconductor sensor devices,” adding, “By continuously increasing R&D investment and expanding both our product portfolio and production capacity, we aim to become a leading global specialized semiconductor company.”

Etnews, hskim@etnews.com, August 19, 2024