Sigetronics, a compound semiconductor specialist, announced on the 8th that it has successfully commercialized its gallium nitride (GaN)-based S-band (2–4 GHz) RF power semiconductor lineup, marking a major step toward securing a domestically developed, high-power RF front-end solution.

This achievement is regarded as an important milestone for Korea’s compound semiconductor industry, as the design, manufacturing, and testing were completed entirely with domestic technology based on core intellectual property transferred from the Electronics and Telecommunications Research Institute (ETRI).

Until now, Sigetronics has primarily grown through its M-FAB-based ESD protection devices and sensor businesses. With its entry into the GaN RF power semiconductor market, the company is expected to expand its portfolio into the high-power RF sector, contributing to ecosystem localization and supply-chain stability.

The newly commercialized S-band RF power semiconductor lineup consists of 10 W, 30 W, 50 W, and 150 W devices, suitable for a wide range of high-power RF systems including military S-band radars, electronic warfare, jamming systems, airborne and ground communication equipment, and test instrumentation.

In particular, Sigetronics offers both a 150 W high-power transistor and 10–50 W driver products optimized to operate together, enabling customers to implement a complete front-end solution based on a consistent design philosophy. This is seen as symbolic proof that Korea’s domestic technology can compete in the global RF power market.

The product family satisfies key performance requirements for high-power RF systems—wide bandwidth, high output power, and high linearity—and is especially competitive in the global market where 10–50 W driver products are in short supply.

Leveraging this lineup, Sigetronics aims to strengthen its position not only in the domestic market but also in defense, aerospace, and communication markets overseas, where demand for GaN-based power semiconductors is rapidly increasing.

According to market research firm Fortune Business Insights, the RF GaN market is expected to grow from $1.7 billion in 2024 to $7.38 billion by 2032, with a CAGR exceeding 20%. As GaN devices increasingly replace silicon-based components, they are becoming essential technologies in next-generation radar, 5G/6G communication infrastructures, avionics, and satellite communications. In this context, Sigetronics’ fully internalized GaN power semiconductor process capability is viewed as a key step forward in strengthening Korea’s technological competitiveness and global supply-chain resilience.

Sigetronics plans to pursue several mid- to long-term strategies, including development of X-band and C-band power devices, expansion of sample qualification with global defense and communication equipment manufacturers, internalization of packaging and testing processes for improved cost and quality competitiveness, and increasing co-development with domestic SME partners. Through these efforts, the company aims to become a central player in Korea’s compound semiconductor industry and a globally competitive next-generation semiconductor solutions provider.

A Sigetronics representative stated, “Building on our accumulated M-FAB operational experience and device technology, we aim to establish a leading national success model in compound semiconductor localization by expanding our GaN RF power semiconductor business alongside our GaAs IRED operations. We will continue to strengthen our global competitiveness through technology internalization and grow into a key enterprise within Korea’s compound semiconductor ecosystem.”

150W-class GaN RF power semiconductor example (Photo = Sigetronics)

EDaily, December 08, 2025