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PRODUCT

FOUNDRY SERVICE

EPI SERVICE

System Wafer Technology
SINGLE/BATCH CHAMBER Si wafer 6 inch and 8 inch 6" Undoped, N(or P)-type Si epi substrate
8" Ge virtual substrate, Ge/GeSn epi substrate

FAB Service

Div. Machine Use Div. Machine Use
Photo-Litho. MPA 2 um Film Depo. LPCVD TEOS
Stepper(2.5X) 0.8 um PECVD Oxide
Track Coat & develop PECVD Oxide/Nitride
Marker Laser Sputter Ti, TiN, Al, Mo
Microscope Inspection E-beam Evaporator Ti, Al, Ni, Au, AuSn
Etch RIE Si, Oxide Doping/Anneal Ion Implanter High current
Wet Cleaning, H₂SO₄, etc POCL3 P
Deep RIE Si, < 20 um RTP Activation, 1100 ℃
ICP Si Furnace Oxidation
ICP GaN, SiC, Sapphire, Ga₂O₃ Furnace High temperature
Back Grinder < 100 um TEST EDS Smart map
Spin-Etcher 10 nm ESD HBM, MM, IEC, TLP
Oven Up to 450 ℃ Nano-spec Oxide, PR thickness
Saw < 100 um Opto-test Spectral response
Ball bonder Au Bond tester BST, BPT
Test Ellipsometer Dielectric film Curve Tracer 3 kV, 30A
Alpha step Step height RF System Power, NF, S-para.
XRF 6 Metals SEM w/ EDX
FTIR Epi thickness Probe Station I-V, C-V

OEM/ODM/R&Ds

Sample Spec. Appl.
APD array 1x4, 1x16, 1x64, 1x128 LiDAR
Bidirectional-TVS ±7V, ±15V, ±24V, ±36V Power-MOSFET, Car, LED
Sensors Temperature, Gas, Hall Safety, Bio-Med.
MEMS heater 500 ℃ Bio & Gas sensor
GaN SBR > 100V Wireless charger
GaN Power-FET D&E-mode Charger, Inverter/converter, PFC
SiC SBD, MOSFET > 1200V Inverter/converter, EV, Solar cell
Ga₂O₃ SBD > 900V Inverter/converter, EV


M-FAB 공정 단가(2022년)

장비명
(공정명)
세부 공정명 B/size
(wfs)
공정단가
(단위:원)
Wafer Si(100), Flat 47.5mm ASK
Si(111), Flat 47.5mm ASK
GaN on Si FET (D-mode, E-mode) ASK
GaN on SiC HEMT ASK
SiC ASK
Epi Si single (undoped, n, p) T < 10um 1 120,000
Si single (undoped, n, p) T < 50um 1 240,000
Si multi-layer (PNP, NPN, etc) T < 10um 1 500,000
Others (GaN on Si, GaN on SiC) ASK
Cleaning Cleaning DIW 24 100,000
Cleaning STD1 24 100,000
Cleaning STD3 24 100,000
Cleaning SC1 24 150,000
Cleaning H2SO4 24 150,000
Cleaning 100:1 HF 24 150,000
Cleaning 50:1 HF 24 150,000
Nitride Wet Etch(H3PO4) 24 150,000
Wet Etch (Lal 1000, 7:1 BHF) 24 300,000
Deglaze 24 200,000
Al Etchant 24 300,000
Ni Etchant 1 100,000
TiW, TiN Wet Etch 24 500,000
Furnace Oxidation(T≤1000A) 24 800,000
Oxidation(1000<T≤5000A) 24 1,200,000
Oxidation(5000<T≤10000A) 24 1,600,000
Drive-In(≤2hr) & Oxidation(<5000A) 24 1,600,000
Drive-In(>2hr) & Oxidation(<5000A) 24 1,600,000
Drive-In(≤2hr) & Oxidation(≥5000A) 24 1,600,000
Drive-In(>2hr) & Oxidation(≥5000A) 24 1,600,000
Anneal(Time≤1hr) 24 250,000
Anneal(1hr<Time≤3hr) 24 400,000
Anneal(3hr<Time≤5hr) 24 400,000
Anneal(5hr<Time≤7hr) 24 400,000
Anneal(7hr<Time≤10hr) 24 500,000
POCl3 Doping 24 1,600,000
Alloy/SOG Curing/Dehydrate 24 400,000
RTA 1 50,000
CVD LP TEOS(T≤5000A) 24 480,000
LP TEOS(5000<T≤10000A) 24 680,000
LP TEOS(10000<T≤15000A) 24 880,000
LP Nitride(T≤1000A) 24 240,000
LP Nitride(1000<T≤3000A) 24 360,000
LP Nitride(3000<T≤5000A) 24 480,000
LP Poly Si(T≤5000A) 24 240,000
LP Poly Si(5000<T≤10000A) 24 360,000
LP Poly Si(10000<T≤15000A) 24 480,000
LP LTO(T≤5000A) 24 240,000
LP LTO(5000<T≤10000A) 24 360,000
LP LTO(10000<T≤15000A) 24 480,000
ALD (Al2O3, T<10nm) 1 ASK
PECVD PE OX(T≤5000A) 1 50,000
PE OX(5000<T≤10000A) 1 70,000
PE OX(10000<T≤15000A) 1 90,000
PE Nitride(T≤5000A) 1 60,000
PE Nitride(5000<T≤10000A) 1 80,000
PE Nitride(10000<T≤15000A) 1 90,000
Implant As, P, BF2, B11 (Dose≥1E15) 6 300,000
P, BF2, B11 (Dose≤1E14) 1 60,000
Dry etch Nitride(T≤2000A) 1 60,000
Nitride(2000<T≤3000A) 1 80,000
Nitride(3000<T≤7000A) 1 100,000
Poly(T≤3000A) 1 60,000
Poly(3000<T≤7000A) 1 80,000
Poly(7000<T≤10000A) 1 100,000
Oxide(T≤3000A) 1 60,000
Oxide(3000<T≤7000A) 1 80,000
Oxide(7000A<T≤15000A) 1 100,000
Silicon(T≤3000A) 1 60,000
Silicon(3000<T≤7000A) 1 80,000
Silicon(7000<T≤10000A) 1 100,000
Silicon(10000<T≤24000A) 1 120,000
Silicon residue remove(T≤500A) 1 60,000
Metal(AlSi T≤10000A) 1 60,000
Metal(AlSi 10000<T≤20000A) 1 80,000
Metal(Ti/AlSi/TiN) 1 90,000
Cr(T≤1000A) 1 50,000
Cr(1000<T≤3000A) 1 80,000
ITO, AlN, Mo 1 110,000
Photo Mask Layout (Not Served) -
Mask Guide (Align Key, Combination) 200,000
HMDS/Coat/EBR/Bake(PR PFi389 GA2) 1 18,000
HMDS/Coat/EBR/Bake(AZ, DNR, others) 1 20,000
HMDS, EBR, Bake(Hot Plate) 1 12,000
Coat(Polyimide, T<6um) 1 60,000
Exposure(i-line Stepper) 1 20,000
Exposure(Projection Aligner) 1 20,000
PEB/Develop(time≤90sec) 1 16,000
PEB/Develop(90<time≤180sec) 1 20,000
PEB/Develop(180<time≤270sec) 1 30,000
Bake Hard 24 20,000
Solvent Strip 24 100,000
Lift-off 1 80,000
Sputtering Ti(T≤500A) 1 40,000
Ti(500<T≤1000A) 1 60,000
Ti(1000<T≤3000A) 1 80,000
TiN(T≤500A) 1 40,000
TiN(500<T≤1000A) 1 60,000
TiN(1000<T≤3000A) 1 80,000
Al(T≤5000A) 1 40,000
Al(5000<T≤10000A) 1 60,000
Al(10000<T≤20000A) 1 80,000
Alloy (Temp≤350C) 1 60,000
Ti, Ni, Al(100<T≤1000A) 5 100,000
Ti, Ni, Al(1000<T≤3000A) 5 120,000
Ag(100<T≤5000A) 5 150,000
Ag(5000<T≤10000A) 5 200,000
E-beam Evaporator Ti, Ni, Al(100<T≤1000A) 24 380,000
Ti, Ni, Al(1000<T≤3000A) 24 450,000
Au (100<T<20,000A) 24 ASK
AuSn (100<T<20,000A) 24 ASK
Pt (100<T<1,000A) 24 ASK
ETC(Cr, W) 24 ASK
PR Strip Dry Strip1 24 60,000
Dry Strip3 1 10,000
Acid 24 60,000
Descum 1 10,000
Back-end Grind (T~ 150um) 1 100,000
Saw (Si) 1 70,000
Saw (GaN, SiC, Sapphire, etc) 1 ASK
Tape Laminator 40,000
Tape Remover 20,000
Visual Inspection (Microscope x60) 1 10,000
Measure & ETC Rc Measurement (TLM) 1 20,000
Rs Measurement (4pp) 1 10,000
Step Height (a-step) 1 2,000
Film Thickness (Nanospec) 1 10,000
Refractive Index (Ellipsometer) 1 20,000
Spectroscopic Ellipsometer 1 40,000
FTIR (Epi thickness, Doping) 1 30,000
Laser Marking 1 5,000
Electrical Characteristics (I-V, C-V) 1hr 150,000
Photodiode Responsivity (300~1100nm) 1 100,000
FIB Inspection 1hr 300,000
SEM Analysis 1hr 80,000
TEM Analysis 1hr 600,000
Simulation (Process & Device) 1hr 100,000
PL (Wafer Scan: Peak, FWHM) 1 200,000
XRD (6 Metal Analysis) 1 70,000
접수 및 문의 세일즈마케팅
전화: 063-262-4650, 4651, 4653
이메일: eomsm@sigetronics.com