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PRODUCT

FOUNDRY SERVICE

FAB Service(Only 6 inch)

Div. Machine Use Div. Machine Use
Photo-Litho. MPA 2 um Film Depo. LPCVD TEOS
Stepper(2.5X) 0.8 um PECVD Oxide
Track Coat & develop PECVD Oxide/Nitride
Marker Laser Sputter Ti, TiN, Al, Mo
Microscope Inspection E-beam Evaporator Ti, Al, Ni, Au, AuSn
Etch RIE Si, Oxide Doping/Anneal Ion Implanter High current
Wet Cleaning, H₂SO₄, etc POCL3 P
Deep RIE Si, < 20 um RTP Activation, 1100 ℃
ICP Si Furnace Oxidation
ICP GaN, SiC, Sapphire, Ga₂O₃ Furnace High temperature
Back Grinder < 100 um TEST EDS Smart map
Spin-Etcher 10 nm ESD HBM, MM, IEC, TLP
Oven Up to 450 ℃ Nano-spec Oxide, PR thickness
Saw < 100 um Opto-test Spectral response
Ball bonder Au Bond tester BST, BPT
Test Ellipsometer Dielectric film Curve Tracer 3 kV, 30A
Alpha step Step height RF System Power, NF, S-para.
XRF 6 Metals SEM w/ EDX
FTIR Epi thickness Probe Station I-V, C-V

OEM/ODM/R&Ds

Sample Spec. Appl.
APD array 1x4, 1x16, 1x64, 1x128 LiDAR
Bidirectional-TVS ±7V, ±15V, ±24V, ±36V Power-MOSFET, Car, LED
Sensors Temperature, Gas, Hall Safety, Bio-Med.
MEMS heater 500 ℃ Bio & Gas sensor
GaN SBR > 100V Wireless charger
GaN Power-FET D&E-mode Charger, Inverter/converter, PFC
SiC SBD, MOSFET > 1200V Inverter/converter, EV, Solar cell
Ga₂O₃ SBD > 900V Inverter/converter, EV

M-FAB Process Cost(2022)

Equipment
(Process name)		 Detailed Process name B/size
(wfs)		 Process Cost
(Unit : KRW)
Wafer Si(100), Flat 47.5mm ASK
Si(111), Flat 47.5mm ASK
GaN on Si FET (D-mode, E-mode) ASK
GaN on SiC HEMT ASK
SiC ASK
Epi Si single (undoped, n, p) T < 10um 1 ASK
Si single (undoped, n, p) T < 50um 1 ASK
Si multi-layer (PNP, NPN, etc) T < 10um 1 ASK
Others (GaN on Si, GaN on SiC) ASK
Cleaning Cleaning DIW 24 ASK
Cleaning STD1 24 ASK
Cleaning STD3 24 ASK
Cleaning SC1 24 ASK
Cleaning H2SO4 24 ASK
Cleaning 100:1 HF 24 ASK
Cleaning 50:1 HF 24 ASK
Nitride Wet Etch(H3PO4) 24 ASK
Wet Etch (Lal 1000, 7:1 BHF) 24 ASK
Deglaze 24 ASK
Al Etchant 24 ASK
Ni Etchant 1 ASK
TiW, TiN Wet Etch 24 ASK
Furnace Oxidation(T≤1000A) 24 ASK
Oxidation(1000<T≤5000A) 24 ASK
Oxidation(5000<T≤10000A) 24 ASK
Drive-In(≤2hr) & Oxidation(<5000A) 24 ASK
Drive-In(>2hr) & Oxidation(<5000A) 24 ASK
Drive-In(≤2hr) & Oxidation(≥5000A) 24 ASK
Drive-In(>2hr) & Oxidation(≥5000A) 24 ASK
Anneal(Time≤1hr) 24 ASK
Anneal(1hr<Time≤3hr) 24 ASK
Anneal(3hr<Time≤5hr) 24 ASK
Anneal(5hr<Time≤7hr) 24 ASK
Anneal(7hr<Time≤10hr) 24 ASK
POCl3 Doping 24 ASK
Alloy/SOG Curing/Dehydrate 24 ASK
RTA 1 ASK
CVD LP TEOS(T≤5000A) 24 ASK
LP TEOS(5000<T≤10000A) 24 ASK
LP TEOS(10000<T≤15000A) 24 ASK
LP Nitride(T≤1000A) 24 ASK
LP Nitride(1000<T≤3000A) 24 ASK
LP Nitride(3000<T≤5000A) 24 ASK
LP Poly Si(T≤5000A) 24 ASK
LP Poly Si(5000<T≤10000A) 24 ASK
LP Poly Si(10000<T≤15000A) 24 ASK
LP LTO(T≤5000A) 24 ASK
LP LTO(5000<T≤10000A) 24 ASK
LP LTO(10000<T≤15000A) 24 ASK
ALD (Al2O3, T<10nm) 1 ASK
PECVD PE OX(T≤5000A) 1 ASK
PE OX(5000<T≤10000A) 1 ASK
PE OX(10000<T≤15000A) 1 ASK
PE Nitride(T≤5000A) 1 ASK
PE Nitride(5000<T≤10000A) 1 ASK
PE Nitride(10000<T≤15000A) 1 ASK
Implant As, P, BF2, B11 (Dose≥1E15) 6 ASK
P, BF2, B11 (Dose≤1E14) 1 ASK
Dry etch Nitride(T≤2000A) 1 ASK
Nitride(2000<T≤3000A) 1 ASK
Nitride(3000<T≤7000A) 1 ASK
Poly(T≤3000A) 1 ASK
Poly(3000<T≤7000A) 1 ASK
Poly(7000<T≤10000A) 1 ASK
Oxide(T≤3000A) 1 ASK
Oxide(3000<T≤7000A) 1 ASK
Oxide(7000A<T≤15000A) 1 ASK
Silicon(T≤3000A) 1 ASK
Silicon(3000<T≤7000A) 1 ASK
Silicon(7000<T≤10000A) 1 ASK
Silicon(10000<T≤24000A) 1 ASK
Silicon residue remove(T≤500A) 1 ASK
Metal(AlSi T≤10000A) 1 ASK
Metal(AlSi 10000<T≤20000A) 1 ASK
Metal(Ti/AlSi/TiN) 1 ASK
Cr(T≤1000A) 1 ASK
Cr(1000<T≤3000A) 1 ASK
ITO, AlN, Mo 1 ASK
Photo Mask Layout (Not Served) -
Mask Guide (Align Key, Combination) ASK
HMDS/Coat/EBR/Bake(PR PFi389 GA2) 1 ASK
HMDS/Coat/EBR/Bake(AZ, DNR, others) 1 ASK
HMDS, EBR, Bake(Hot Plate) 1 ASK
Coat(Polyimide, T<6um) 1 ASK
Exposure(i-line Stepper) 1 ASK
Exposure(Projection Aligner) 1 ASK
PEB/Develop(time≤90sec) 1 ASK
PEB/Develop(90<time≤180sec) 1 ASK
PEB/Develop(180<time≤270sec) 1 ASK
Bake Hard 24 ASK
Solvent Strip 24 ASK
Lift-off 1 ASK
Sputtering Ti(T≤500A) 1 ASK
Ti(500<T≤1000A) 1 ASK
Ti(1000<T≤3000A) 1 ASK
TiN(T≤500A) 1 ASK
TiN(500<T≤1000A) 1 ASK
TiN(1000<T≤3000A) 1 ASK
Al(T≤5000A) 1 ASK
Al(5000<T≤10000A) 1 ASK
Al(10000<T≤20000A) 1 ASK
Alloy (Temp≤350C) 1 ASK
Ti, Ni, Al(100<T≤1000A) 5 ASK
Ti, Ni, Al(1000<T≤3000A) 5 ASK
Ag(100<T≤5000A) 5 ASK
Ag(5000<T≤10000A) 5 ASK
E-beam Evaporator Ti, Ni, Al(100<T≤1000A) 24 ASK
Ti, Ni, Al(1000<T≤3000A) 24 ASK
Au (100<T<20,000A) 24 ASK
AuSn (100<T<20,000A) 24 ASK
Pt (100<T<1,000A) 24 ASK
ETC(Cr, W) 24 ASK
PR Strip Dry Strip1 24 ASK
Dry Strip3 1 ASK
Acid 24 ASK
Descum 1 ASK
Back-end Grind (T~ 150um) 1 ASK
Saw (Si) 1 ASK
Saw (GaN, SiC, Sapphire, etc) 1 ASK
Tape Laminator ASK
Tape Remover ASK
Visual Inspection (Microscope x60) 1 ASK
Measure & ETC Rc Measurement (TLM) 1 ASK
Rs Measurement (4pp) 1 ASK
Step Height (a-step) 1 ASK
Film Thickness (Nanospec) 1 ASK
Refractive Index (Ellipsometer) 1 ASK
Spectroscopic Ellipsometer 1 ASK
FTIR (Epi thickness, Doping) 1 ASK
Laser Marking 1 ASK
Electrical Characteristics (I-V, C-V) 1hr ASK
Photodiode Responsivity (300~1100nm) 1 ASK
FIB Inspection 1hr ASK
SEM Analysis 1hr ASK
TEM Analysis 1hr ASK
Simulation (Process & Device) 1hr ASK
PL (Wafer Scan: Peak, FWHM) 1 ASK
XRD (6 Metal Analysis) 1 ASK
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TEL : 063-262-4650, 4651, 4653
Email : eomsm@sigetronics.com