SIGETRONICS announced on the 30th that it has successfully verified the operational performance of a 300W-class gallium nitride (GaN) RF HEMT (High Electron Mobility Transistor) through technology transfer from the Electronics and Telecommunications Research Institute (ETRI).
The recently unveiled 300W-class GaN power device operates in the S-band (2–4 GHz), making it suitable for radar equipment in the defense sector as well as for applications in 5G mobile communications, Wi-Fi, and Bluetooth. In addition, emerging demand in the consumer electronics industry — such as RF ovens, plasma lighting, and RF generators for semiconductor equipment — is expected to expand utilization in new markets.
Through its first technology transfer with ETRI, SIGETRONICS successfully fabricated a GaN HEMT that meets both high output power and high efficiency requirements. After packaging the chip and mounting it onto a verification module, the company confirmed performance of 300W output power and a power density exceeding 10W/mm, thereby achieving technological self-reliance — a first in Korea.
Dr. Dong-Min Kang, Director of the RF and Power Components Laboratory at ETRI, stated, “This technology can be applied to AESA (Active Electronically Scanned Array) radars, which are core technologies of state-of-the-art fighter jets currently held only by the United States and Japan, and will significantly contribute to strengthening Korea’s defense competitiveness.” GaN RF devices for AESA radar are used in advanced surveillance and reconnaissance systems such as Aegis destroyers and Patriot missiles, and are regarded as a key technology for defense self-sufficiency.
SIGETRONICS began receiving technology transfer from ETRI in 2020 and is now in the second phase. The company plans to reinforce device structure, process, and packaging technologies, with the goal of securing sample-level production in 2023 and entering mass production in 2024. To improve productivity, SIGETRONICS will also upgrade equipment at its 6-inch fabrication line, while ETRI’s existing line is based on 4-inch wafers.
The company emphasized, “There remain typical engineering issues to address from development to commercialization, and next-generation productization will require additional time and expertise. To commercialize GaN semiconductors, we plan to continue close collaboration with ETRI researchers.” SIGETRONICS also noted that it aims to link this progress with follow-up development to enhance output performance and expand into high-frequency applications such as 5G at 28 GHz.
Founded as a lab-based venture from Chonbuk National University, SIGETRONICS has launched foundry process services for GaN and SiC wide-bandgap (WBG) semiconductors at its “M-FAB” facility, leveraging its infrastructure and equipment. With more than 80 tools, including a stepper for optoelectronic devices, the company provides complete 6-inch wafer processing and testing services covering front-end, back-end, and evaluation.
In addition, SIGETRONICS has specialized technology for realizing nano-scale semiconductor device structures through ultra-fine bonding, enabling commercialization of products such as ESD protection devices (TVS), optical sensors (APD, BB-PD), and power devices (MOS, MCT). By further strengthening its 6-inch M-FAB, the company is focusing on the development and commercialization of third-generation semiconductors including GaN, SiC, and Ga₂O₃.
