SIGETRONICS, a power semiconductor device developer, announced on the 27th that it has signed a Memorandum of Understanding (MOU) with Warp Solutions, a company specializing in wireless power transmission, for the joint development and supply of gallium nitride (GaN)-based power semiconductors.

SIGETRONICS is the first company in Korea to develop a 6-inch GaN power semiconductor FAB. Through this agreement, SIGETRONICS will jointly develop GaN power devices for long-distance wireless charging with Warp Solutions and supply the finished products to the company.

GaN power semiconductor devices are next-generation semiconductors that can reduce power consumption compared to silicon devices and maintain performance even under high temperature and high voltage conditions.

Meanwhile, SIGETRONICS is pursuing a KOSDAQ listing this year.