<SIGETRONICS’ 6-Inch GaN Semiconductor Epi Wafer>

A domestic small and medium-sized enterprise has established an integrated technology system for the design and manufacturing of 6-inch gallium nitride (GaN) power semiconductor wafers, which are recognized as next-generation power semiconductors. This achievement demonstrates the possibility of completing the entire process — from GaN epitaxial growth, previously dependent on imports, to device fabrication — with purely domestic technology.

SIGETRONICS (Co-CEOs Kyu-Hwan Shim and Deok-Ho Cho), a semiconductor device manufacturer, announced on the 7th that it had successfully implemented enhancement-mode (E-mode) power semiconductor devices on GaN 6-inch epitaxial wafers, which feature outstanding high-frequency performance among third-generation wide-bandgap (WBG) semiconductors, in collaboration with the Korea Nano Technology Research Institute as part of a joint “GaN power device” research project.

WBG semiconductors refer to GaN, silicon carbide (SiC), and gallium oxide (Ga₂O₃), all of which have a much wider bandgap (above 3.4 eV) compared to traditional silicon semiconductors (about 1.1 eV). Among them, GaN power semiconductors are at the center of intense global R&D competition. Thanks to their material properties that allow integration with control circuits, GaN devices are highly advantageous in reducing the size and weight of future mobility systems while improving power efficiency.

GaN power semiconductors operate at high speeds and can be used as high-frequency (RF) devices in mobile communication and radar power amplifiers. Beyond information and communication technology (ICT), they are expected to serve as key strategic components in transforming Korea’s semiconductor industry into high value-added sectors, including defense (“K-Defense”) and space (“K-Space”).

Founded as a startup out of Chonbuk National University, SIGETRONICS was the first in Korea to succeed in developing power semiconductors using GaN after transferring technology from the Electronics and Telecommunications Research Institute (ETRI). Together with the Korea Nano Technology Research Institute, the company has been building a platform to localize GaN epitaxial wafer materials.

Until now, all epitaxial wafers had been imported for GaN device research, but SIGETRONICS has succeeded in developing the design and manufacturing technologies for 6-inch GaN power semiconductor wafers on its own. The company has secured the ability to localize not only epitaxial growth, which requires advanced technical expertise, but also device fabrication.

Based on this achievement, the company plans to further develop mass-production technology and internalize all manufacturing processes, including epitaxial growth, by 2025 in order to launch new GaN power semiconductors.

CEO Shim Kyu-Hwan stated, “We are pursuing the commercialization of diverse new devices in electrostatic, optical sensor, and power applications under the banner of ‘from epi to device.’ Our principle of technology management is to swiftly realize unique device structures through epitaxial growth technology, thereby ensuring both performance and cost competitiveness while accelerating productization.”