Sigetronics, a specialized semiconductor device company, announced on the 20th that it has begun full-scale mass production of compound semiconductors to strengthen its sensor business.
This marks the fruition of two years of continuous investment and technology development since its listing on KOSDAQ in 2023.
Recently, the company completed the construction of a 3- and 4-inch compound semiconductor production line and has started pilot mass production of gallium arsenide (GaAs)-based infrared sensors. Beginning in September–October, the line will operate at full capacity with a monthly output of 4,000 wafers, and by 2026, Sigetronics plans to expand its production capacity to over 6,000 wafers per month while broadening its product lineup.
Initial production has already started through EL, a major Chinese assembly company. Over the next three to four months, the company intends to gradually scale up mass production and accelerate its entry into overseas markets through partnerships with major Japanese companies such as T Corporation.
Compound semiconductors include not only GaAs but also silicon carbide (SiC), gallium nitride (GaN), and gallium oxide (Ga₂O₃). These materials are regarded as key enablers in high-speed, high-temperature, high-voltage, and optoelectronic applications where silicon semiconductors face limitations. They are essential for manufacturing optoelectronic devices such as avalanche photodiodes (APDs), laser diodes (LDs), and LEDs, as well as electronic devices like high-electron-mobility transistors (HEMTs), heterojunction field-effect transistors (HFETs), and insulated-gate bipolar transistors (IGBTs).
According to Global Market Insights, the compound semiconductor market is projected to grow at a CAGR of 10.9% and reach approximately USD 112 billion by 2032. Although compound semiconductors currently account for about 8% of the overall semiconductor market, the share is expected to surpass 10% by 2033.
Sigetronics is also developing devices such as GaN HFETs, SiC MOSFETs, and Ga₂O₃ MOSFETs in the 650V–kV class, as well as RF power amplifier HEMTs for S-band (3.5 GHz) and X-band (10 GHz) applications. After stabilizing its sensor business based on the 3- and 4-inch lines, the company plans to launch full-scale mass production of power and RF-focused compound semiconductors at its 6-inch M-FAB line.
The company is advancing device manufacturing and foundry process services based on 3-, 4-, and 6-inch silicon and various compound semiconductors. Leveraging its expertise in ESD, sensors, power, and RF devices, Sigetronics is building an independent IP platform to enhance national competitiveness in specialized semiconductors and position itself as a leading global company.
ETNews, hskim@etnews.com, August 20, 2025