GaAs infrared optical sensor (left) and broadband optical sensor wafer developed by Sigetronics.

Wanju, South Korea — July 6 — Semiconductor device manufacturer Sigetronics Co., Ltd. (co-CEOs Kyu-Hwan Shim and Deok-Ho Cho) announced plans to expand its sensor business by establishing a mass production system, while also accelerating the commercialization of Gallium Nitride (GaN) power semiconductors, a promising next-generation replacement for traditional silicon devices.

Until now, Sigetronics has primarily focused on photodetectors for optocouplers, but as sensor intelligence and diversification gain momentum in bio-healthcare, robotics, AI, and automotive fields, the company is now positioning itself to meet the surging global demand.

Since early this year, Sigetronics has successfully entered the wearable sensor market, supplying high-performance sensors for smartphones and smart rings. The company has also diversified its product offerings from photodetectors to light emitters and recently launched volume production and exports of its new infrared (IR) emitter devices.

To support this growth, Sigetronics plans to build a dedicated compound semiconductor cleanroom near its headquarters in Wanju County, North Jeolla Province. Final negotiations with the local government are underway. In line with global sensor market demand, the company plans to invest an additional KRW 8 billion (approx. USD 5.8 million) over the next two years to increase production capacity to over 20,000 wafers per month. Annual sensor revenue is targeted to grow from KRW 3 billion (approx. USD 2.2 million) in 2023 to over KRW 10 billion (USD 7.2 million) by 2025.

Deok-Ho Cho, co-CEO of Sigetronics, stated, “Our next-generation sensor products will become a new growth engine. Together with our existing ESD (Electrostatic Discharge) product line, we plan to build a profitable operational structure and pursue a fresh leap forward.”

At the company’s Multi-Project Fab (M-FAB), Sigetronics is also pushing forward with the commercialization of GaN power semiconductors in collaboration with both domestic and global partners. Known for their high efficiency, fast switching speeds, and compact form factors, GaN devices offer environmentally friendly solutions by reducing power consumption and contributing to carbon emissions reduction. Demand is expected to rise sharply in consumer electronics (e.g., smartphones, laptops), as well as in electric vehicles, robotics, aerospace, and defense applications.

The company is further developing GaN-based RF (radio frequency) devices through technology transfer and collaboration with local research institutes, with business strategies focused on S-band and X-band applications. To support this initiative, Sigetronics plans to strengthen its GaN production line at M-FAB and pursue joint ventures (JVs) and other external partnerships.

Additionally, the company is working to fully establish its four-sector foundry business structure — covering ESD, sensor, power, and RF segments — at an early stage.

Cho emphasized, “These facility investments and commercialization efforts mark a fundamental step toward becoming a globally recognized specialized semiconductor company. We are fully committed to securing a position among the top 10 global players in the non-memory semiconductor industry.”

Etnews, hskim@etnews.com, August 6, 2024