Sigetronics announced that it has successfully commercialized mass production of its silicon-based power semiconductor for pulsed power applications, the MCT (MOS Controlled Thyristor), through a technology transfer from the Electronics and Telecommunications Research Institute (ETRI) and participation in a joint national R&D program.

Pulsed-power semiconductors are high-voltage switching devices that store and compress electrical energy under low power and then release a large burst of energy in a very short time. These components are widely used in high-energy detonators for defense applications, as well as in electron accelerators, gas treatment systems, plasma generators, and laser systems across various industrial sectors.

The newly commercialized MCT boasts superior pulsed power characteristics, including a breakdown voltage exceeding 1,500V, low power loss, and drive capability of over 2kW. Currently, only a few companies in the United States manufacture such devices, and they are classified as EL (Export License)–controlled items due to their sensitive nature.

Cho Deok-ho, Head of R&D at Sigetronics, stated, “This successful domestic development of MCTs is a significant milestone in building a self-reliant ecosystem for defense semiconductors. It holds strategic value not only for national defense security but also for securing key technologies in the field of strategic semiconductors.”

He further emphasized the importance of sustained government support and investment, noting, “Collaboration between public research institutions and SMEs is essential to expand the domestic defense semiconductor industry.”